Ordering number : ENA0857A
MCH3374
P-Channel Power MOSFET
–12V, –3A, 70m Ω , Single MCPH3
Features
http://onsemi.com
?
?
?
Low ON-resistance
Ultrahigh-spees switching
1.8V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--12
±8
--3
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--12
1.0
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-003
Product & Package Information
? Package : MCPH3
? JEITA, JEDEC : SC-70, SOT-323
? Minimum Packing Quantity : 3,000 pcs./reel
2.0
3
0.15
MCH3374-TL-E
0 to 0.02
Packing Type : TL
Marking
QF
TL
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
July, 2013
60612TKIM/61307PE TIIM TC-00000716 No. A0857-1/7
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